Fan-out semiconductor package having redistribution line structure

ABSTRACT

A fan-out semiconductor package including a redistribution line structure is provided. The fan-out semiconductor package includes a plurality of redistribution line insulating layers and a plurality of redistribution line patterns arranged on at least one of an upper surface and a lower surface of each of the plurality of redistribution line insulating layers; at least one semiconductor chip arranged on the redistribution line structure and occupying a footprint having a horizontal width that is less than a horizontal width of the redistribution line structure; and a molding member surrounding the at least one semiconductor chip on the redistribution line structure and having a horizontal width that is greater than the horizontal width of the redistribution line structure, wherein the plurality of redistribution line insulating layers have a cascade structure.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. application Ser. No.16/299,307, filed on Mar. 12, 2019, which claims the benefit of KoreanPatent Application No. 10-2018-0089507, filed on Jul. 31, 2018, in theKorean Intellectual Property Office, the entire contents of each ofwhich are incorporated herein in its entirety by reference.

BACKGROUND

The inventive concepts relate to a semiconductor package, and moreparticularly, to a fan-out semiconductor package having a redistributionline structure.

With the development in electronic industries and demand from users,electronic devices have become smaller and/or multi-functional and havehigher capacity. This leads to the requirement for a highly integratedsemiconductor chip.

Specifically, in a highly integrated semiconductor chip having anincreased number of input and output (I/O) terminals, distances betweenthe I/O terminals may be reduced, and thus, interference between the I/Oterminals may occur. A fan-out semiconductor package has been used toincrease the distances between the I/O terminals.

The inventive concepts provide a fan-out semiconductor package having aredistribution line structure having improved reliability.

According to an aspect of the inventive concepts, there is provided afan-out semiconductor package including a redistribution line structureincluding a plurality of redistribution line insulating layers and aplurality of redistribution line patterns on at least one of an uppersurface and a lower surface of each of the plurality of redistributionline insulating layers at least one semiconductor chip on theredistribution line structure and occupying a footprint having ahorizontal width that is less than a horizontal width of theredistribution line structure, and a molding member surrounding the atleast one semiconductor chip on the redistribution line structure andhaving a horizontal width that is greater than the horizontal width ofthe redistribution line structure, wherein the plurality ofredistribution line insulating layers have a cascade structure.

According to another aspect of the inventive concepts, there is provideda fan-out semiconductor package including a redistribution linestructure including a plurality of redistribution line insulating layershaving a cascade structure, and a plurality of redistribution linepatterns on at least one of an upper surface and a lower surface of eachof the plurality of redistribution line insulating layers, at least onesemiconductor chip on the redistribution line structure and electricallyconnected to the plurality of redistribution line patterns, and amolding member surrounding the at least one semiconductor chip on theredistribution line structure, wherein a horizontal width of theredistribution line insulating layer from among the plurality ofredistribution line insulating layers, farther from the at least onesemiconductor chip, is greater than a horizontal width of theredistribution line insulating layer from among the plurality ofredistribution line insulating layers, closer to the at least onesemiconductor chip.

According to another aspect of the inventive concepts, there is provideda fan-out semiconductor package including a redistribution linestructure including a plurality of redistribution line insulating layershaving a cascade structure, a plurality of redistribution line patternson an upper surface of at least one of the plurality of redistributionline insulating layers, and a plurality of redistribution line viapatterns connected to the plurality of redistribution line patterns andpenetrating at least one of the plurality of redistribution lineinsulating layers, at least one semiconductor chip on the redistributionline structure and electrically connected to the plurality ofredistribution line patterns and the plurality of redistribution linevia patterns, and a molding member surrounding the at least onesemiconductor chip on the redistribution line structure, and protrudingfarther outside the redistribution line structure in a horizontaldirection, wherein side surfaces of each of the plurality ofredistribution line insulating layers are inclined surfaces each havingan acute angle from a normal line with respect to a lower surface ofeach of the plurality of redistribution line insulating layers, and anacute angle of a side surface of one of the plurality of redistributionline insulating layers is less than acute angles of side surfaces of theother of the plurality of redistribution line insulating layers.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the inventive concepts will be more clearly understoodfrom the following detailed description taken in conjunction with theaccompanying drawings in which:

FIGS. 1A and 1B are cross-sectional views of a fan-out semiconductorpackage according to at least one embodiment, wherein FIG. 1B is anenlarged cross-sectional view of a region 1 b of FIG. 1A;

FIGS. 2A through 2L are cross-sectional views showing a sequence of amethod of manufacturing a fan-out semiconductor package, according to atleast one embodiment;

FIG. 3 is a cross-sectional view of a fan-out semiconductor packageaccording to at least one embodiment;

FIG. 4 is a cross-sectional view of a fan-out semiconductor packageaccording to at least one embodiment;

FIGS. 5A and 5B are cross-sectional views of a fan-out semiconductorpackage according to at least one embodiment, wherein FIG. 5B is anenlarged cross-sectional view of a region Vb of FIG. 5A;

FIGS. 6A through 6F are cross-sectional views showing a sequence of amethod of manufacturing a fan-out semiconductor package, according to atleast one embodiment;

FIG. 7 is a cross-sectional view of a fan-out semiconductor packageaccording to at least one embodiment; and

FIG. 8 is a cross-sectional view of a fan-out semiconductor packageaccording to at least one embodiment.

DETAILED DESCRIPTION OF EMBODIMENTS

FIGS. 1A and 1B are cross-sectional views of a fan-out semiconductorpackage 1, according to at least one embodiment. In detail, FIG. 1B isan enlarged cross-sectional view of a region 1 b of FIG. 1A.

Referring to FIGS. 1A and 1B, the fan-out semiconductor package 1 mayinclude a redistribution line structure 100 and a semiconductor chip 200on the redistribution line structure 100.

The redistribution line structure 100 may include a plurality ofredistribution line insulating layers 110, 120, and 130, a plurality ofredistribution line patterns 114, 124, and 134 arranged on at least oneof an upper surface and a lower surface of each of the plurality ofredistribution line insulating layers 110, 120, and 130, and/or aplurality of redistribution line via patterns 126 and 136 eachpenetrating at least one of the plurality of redistribution lineinsulating layers 110, 120, and 130 and connected to at least one of theplurality of redistribution line patterns 114, 124, and 134 bycontacting the at least one of the plurality of redistribution linepatterns 114, 124, and 134.

Each of the plurality of redistribution line insulating layers 110, 120,and 130 may include, for example, a material layer including an organiccompound. In some embodiments, each of the plurality of redistributionline insulating layers 110, 120, and 130 may include a material layerincluding an organic polymer material. In some embodiments, each of theplurality of redistribution line insulating layers 110, 120, and 130 mayinclude photosensitive polyimide (PSPI).

A plurality of seed layers 112, 122, and 132 may be between each of theplurality of redistribution line patterns 114, 124, and 134 and theplurality of redistribution line via patterns 126 and 136, and any oneof the plurality of redistribution line insulating layers 110, 120, and130. In some embodiments, the plurality of seed layers 112, 122, and 132may be formed by using physical vapor deposition, and the plurality ofredistribution line patterns 114, 124, and 134 and the plurality ofredistribution line via patterns 126 and 136 may be formed by usingelectroless plating.

The plurality of seed layers 112, 122, and 132 may include, for example,a material selected from the group consisting of Cu, Ti, TiW, TiN, Ta,TaN, Cr, and Al. However, materials of the plurality of seed layers 112,122, and 132 are not limited thereto. In some embodiments, the pluralityof seed layers 112, 122, and 132 may include Cu/Ti, that is, Cu stackedon Ti, or Cu/TiW, that is, Cu stacked on TiW.

The plurality of redistribution line patterns 114, 124, and 134 and theplurality of redistribution line via patterns 126 and 136 may include,but are not limited to, a metal, such as Cu, Al, W, Ti, Ta, In, Mo, Mn,Co, Sn, Ni, Mg, Re, Be, Ga, Ru, etc., or an alloy thereof. In someembodiments, when Cu is included in the plurality of redistribution linepatterns 114, 124, and 134 and the plurality of redistribution line viapatterns 126 and 136, at least one of the plurality of seed layers 112,122, and 132 may operate as a diffusion barrier layer.

One or more of the plurality of redistribution line patterns 114, 124,and 134 may be integrally formed with one or more of the plurality ofredistribution line via patterns 126 and 136. For example, one or moreof the plurality of redistribution line patterns 114, 124, and 134 maybe integrally formed with one or more of the plurality of redistributionline via patterns 126 and 136, the one or more of the plurality ofredistribution line via patterns 126 and 136 contacting upper portionsof the one or more of the plurality of redistribution line patterns 114,124, and 134, or may be integrally formed with one or more of theplurality of redistribution line via patterns 126 and 136, the one ormore of the plurality of redistribution line via patterns 126 and 136contacting lower portions of the one or more of the plurality ofredistribution line patterns 114, 124, and 134.

The plurality of redistribution line insulating layers 110, 120, and 130may include a first redistribution line insulating layer 110, a secondredistribution line insulating layer 120, and a third redistributionline insulating layer 130 that are sequentially stacked. The pluralityof seed layers 112, 122, and 132 may include a first seed layer 112, asecond seed layer 122, and a third seed layer 132 contacting the firstthrough third redistribution line insulating layers 110 through 130,respectively. The plurality of redistribution line patterns 114, 124,and 134 may include a first redistribution line pattern 114 at an uppersurface of the first redistribution line insulating layer 110, a secondredistribution line pattern 124 at an upper surface of the secondredistribution line insulating layer 120, and a third redistributionline pattern 134 at an upper surface of the third redistribution lineinsulating layer 130. The plurality of redistribution line via patterns126 and 136 may include a first redistribution line via pattern 126 onthe first redistribution line pattern 114 and a second redistributionline via pattern 136 on the second redistribution line pattern 124.

A detailed structure of the redistribution line structure 100 will bedescribed below.

The first seed layer 112 is arranged on a portion of the upper surfaceof the first redistribution line insulating layer 110 and the firstredistribution line pattern 114 is arranged on the first seed layer 112.The first seed layer 112 is between the upper surface of the firstredistribution line insulating layer 110 and a lower surface of thefirst redistribution line pattern 114.

The second redistribution line insulating layer 120 is stacked on thefirst redistribution line insulating layer 110, wherein the secondredistribution line insulating layer 120 covers a portion of the firstredistribution line pattern 114 and has a first via opening VO1 exposingthe remaining portions of the first redistribution line pattern 114. Ahorizontal width W2 of the second redistribution line insulating layer120 may be less than a horizontal width W1 of the first redistributionline insulating layer 110.

The second seed layer 122 is arranged at a portion of the upper surfaceof the second redistribution line insulating layer 120, an inner sidesurface of the first via opening VO1, and a portion of the upper surfaceof the first redistribution line pattern 114, the portion of the uppersurface of the first redistribution line pattern 114 being exposed viathe first via opening VO1. The first redistribution line via pattern 126and the second redistribution line pattern 124 are arranged on thesecond seed layer 122. The first redistribution line via pattern 126 maycover a portion of the second seed layer 122, the portion of the secondseed layer 122 being in the first via opening VO1 and filling the firstvia opening VO1. The second redistribution line pattern 124 may bearranged at a portion of the second seed layer 122 on the upper surfaceof the second redistribution line insulating layer 120, and on the firstredistribution line via pattern 126.

The second seed layer 122 may be between the second redistribution linepattern 124 and the first redistribution via pattern 126, and the secondredistribution line insulating layer 120, and between the firstredistribution line via pattern 126 and the first redistribution linepattern 114. The first redistribution line via pattern 126 and thesecond redistribution line pattern 124 may be integrally formed.

The third redistribution line insulating layer 130 is stacked on thesecond redistribution line insulating layer 120, wherein the thirdredistribution line insulating layer 130 covers a portion of the secondredistribution line pattern 124 and has a second via opening VO2exposing the remaining portions of the second redistribution linepattern 124. A horizontal width W3 of the third redistribution lineinsulating layer 130 may be less than the horizontal width W2 of thesecond redistribution line insulating layer 120.

The third seed layer 132 is arranged at a portion of the upper surfaceof the third redistribution line insulating layer 130, an inner sidesurface of the second via opening VO2, and a portion of the uppersurface of the second redistribution line pattern 124, the portion ofthe upper surface of the second redistribution line pattern 124 beingexposed via the second via opening VO2. The second redistribution linevia pattern 136 and the third redistribution line pattern 134 arearranged on the third seed layer 132. The second redistribution line viapattern 136 may cover a portion of the third seed layer 132, the portionbeing in the second via opening VO2 and may fill the second via openingVO2. The third redistribution line pattern 134 may be arranged at aportion of the third seed layer 132 on the upper surface of the thirdredistribution line insulating layer 130, and on the secondredistribution line via pattern 136.

The third seed layer 132 may be between the third redistribution linepattern 134 and the second redistribution via pattern 136, and the thirdredistribution line insulating layer 130, and between the secondredistribution line via pattern 136 and the second redistribution linepattern 124. The second redistribution line via pattern 136 and thethird redistribution line pattern 134 may be integrally formed.

FIG. 1A illustrates that the redistribution line structure 100 includesthe three redistribution line insulating layers 110, 120, and 130, thethree redistribution line patterns 114, 124, and 134, and the tworedistribution line via patterns 126 and 136. However, theredistribution line structure 100 is not limited thereto, and may bevariously modified according to a design of circuit wires in theredistribution line structure 100.

For example, the redistribution line structure 100 may include more thantwo, three, or four redistribution line insulating layers. For example,the redistribution line structure 100 may have the redistribution linepatterns, the number of which is less than the number of redistributionline insulating layers by one, the redistribution line patterns, thenumber of which is the same as the number of redistribution lineinsulating layers, or the redistribution line patterns, the number ofwhich is greater than the number of redistribution line insulatinglayers by one. For example, the redistribution line structure 100 mayhave the redistribution line via patterns, the number of which is lessthan the number of redistribution line insulating layers by two, theredistribution line via patterns, the number of which is less than thenumber of redistribution line insulating layers by one, or theredistribution line via patterns, the number of which is the same as thenumber of redistribution line insulating layers.

In some embodiments, a portion of an uppermost redistribution linepattern from among the redistribution line patterns 114, 124, and 134,for example, a portion of the third redistribution line pattern 134 mayperform a function of a chip connection pad to which the semiconductorchip 200 is coupled. In some embodiments, a portion of a lowermostredistribution line pattern from among the redistribution line patterns114, 124, and 134, for example, a portion of the first redistributionline pattern 114 may perform a function of a terminal connection pad towhich an external connection terminal 400 is coupled.

The semiconductor chip 200 may be coupled on the redistribution linestructure 100. A horizontal width W4 of the semiconductor chip 200 maybe less than the horizontal width W3 of the third redistribution lineinsulating layer 130.

The redistribution line structure 100 may protrude farther outside thanthe semiconductor chip 200 in a horizontal direction. For example, eachof the first through third redistribution line insulating layers 110through 130 included in the redistribution line structure 100 may extendto protrude farther outside than the semiconductor chip 200 in thehorizontal direction.

The plurality of redistribution line insulating layers 110, 120, and 130included in the redistribution line structure 100 may have a cascadestructure, in which widths of the plurality of redistribution lineinsulating layers 110, 120, and 130 increase away from the semiconductorchip 200.

In some embodiments, at least one of the plurality of redistributionline patterns 114, 124, and 134 included in the redistribution linestructure 100 may protrude farther outside than the semiconductor chip200 in a horizontal direction. FIG. 1A illustrates that a portion of thefirst redistribution line pattern 114 and a portion of the secondredistribution line pattern 124 from among the plurality ofredistribution line patterns 114, 124, and 134 protrude farther outsidethan the semiconductor chip 200 in the horizontal direction. However,the inventive concepts are not limited thereto. For example, a portionof the first redistribution line pattern 114 from among the plurality ofredistribution line patterns 114, 124, and 134 may protrude fartheroutside than the semiconductor chip 200 in the horizontal direction, ora portion of each of the first through third redistribution linepatterns 114, 124, and 134 may protrude farther outside than thesemiconductor chip 200 in the horizontal direction.

The semiconductor chip 200 may include, for example, a centralprocessing unit (CPU) chip, a graphics processing unit (GPU) chip, or anapplication processor (AP) chip. The semiconductor chip 200 may be, forexample, a dynamic random access memory (DRAM) chip, a static randomaccess memory (SRAM) chip, a flash memory chip, an electrically erasableand programmable read-only memory (EEPROM) chip, a phase-change RAM(PRAM) chip, a magnetic RAM (MRAM) chip, or a resistive RAM (RRAM) chip.

The semiconductor chip 200 may include a semiconductor substrate 210 anda chip pad 220 arranged on a surface of the semiconductor substrate 210.

The chip pad 220 of the semiconductor chip 200 may be connected to thethird redistribution line pattern 134 of the redistribution linestructure 100 via a chip connection member 230. The chip connectionmember 230 may include, for example, a bump, a solder ball, or aconductive pillar.

The semiconductor substrate 210 may include, for example, silicon (Si).Alternatively, the semiconductor substrate 210 may include asemiconductor element, such as germanium (Ge), or a compoundsemiconductor, such as silicon carbide (SiC), gallium arsenide (GaAs),indium arsenide (InAs), and indium phosphide (InP). The semiconductorsubstrate 210 may have an active surface and a non-active surfaceopposite to the active surface. In some embodiments, the active surfaceof the semiconductor substrate 210 may be toward the redistribution linestructure 100.

A semiconductor device including a plurality of various types ofindividual devices may be formed at the active surface of thesemiconductor substrate 210, in the semiconductor chip 200.

An underfill material layer 250 surrounding the chip connection member230 may be filled between the semiconductor chip 200 and theredistribution line structure 100. The underfill material layer 250 mayinclude, for example, epoxy resins formed by using a capillary underfillmethod. In some embodiments, the underfill material layer 250 may be anon-conductive film (NCF).

The fan-out semiconductor package 1 may include a molding member 300surrounding the semiconductor chip 200 on the redistribution linestructure 100. The molding member 300 may include, for example, an epoxymolding compound (EMC). The molding member 300 may surround an uppersurface of the redistribution line structure 100 and side surfaces andan upper surface of the semiconductor chip 200. The molding member 300may cover a portion of an upper surface and side surfaces of each of theplurality of redistribution line insulating layers 110, 120, and 130included in the redistribution line structure 100.

The molding member 300 may protrude farther outside than theredistribution line structure 100 in a horizontal direction. Ahorizontal width W5 of the molding member 300 may be greater than thehorizontal width W1 of the first redistribution line insulating layer110. That is, the horizontal width W5 of the molding member 300 may begreater than a total width of the redistribution line structure 100.

A lower surface of the molding member 300 and a lower surface of theredistribution line structure 100, for example, a lower surface of thefirst redistribution line insulating layer 110, may be at a same level.Also, the lower surface of the molding member 300 and the lower surfaceof the redistribution line structure 100, for example, the lower surfaceof the first redistribution insulating layer 110, may be coplanar.

Side surfaces of each of the plurality of redistribution line insulatinglayers 110 through 130 may be inclined surfaces each having an acuteangle (between 0° and 90°) from a normal line with respect to a lowersurface of each of the plurality of redistribution line insulatinglayers 110 through 130. In some embodiments, each of the plurality ofredistribution line insulating layers 110 through 130 may increase inwidth away from the semiconductor chip 200. The first through thirdredistribution line insulating layers 110 through 130 may have a firstside surface SS1, a second side surface SS2, and a third side surfaceSS3, respectively.

The first side surface SS1 of the first redistribution line insulatinglayer 110 may be an inclined surface having a first angle θ1 from thenormal line with respect to the lower surface of the firstredistribution line insulating layer 110. The second side surface SS2 ofthe second redistribution line insulating layer 120 may be an inclinedsurface having a second angle θ2 from the normal line with respect tothe lower surface of the second redistribution line insulating layer120. The third side surface SS3 of the third redistribution lineinsulating layer 130 may be an inclined surface having a third angle θ3from the normal line with respect to the lower surface of the thirdredistribution line insulating layer 130.

Any one of the first through third angles θ1 through θ3 may have adifferent value from the others. That is, any one of the first throughthird side surfaces SS1 through SS3 may be an inclined surface having adifferent inclination from the others. For example, the first angle θ1may be less than each of the second and third angles θ2 and θ3. That is,the first side surface SS1 may be a more steeply inclined surface thanthe second and third side surfaces SS2 and SS3. In some embodiments, thesecond and third angles θ2 and θ3 may be the same or substantially thesame, but are not limited thereto. That is, the second and third sidesurfaces SS2 and SS3 may be the inclined surfaces having the same orsubstantially the same inclination, but are not limited thereto.

A thickness of any one of the plurality of redistribution lineinsulating layers 110 through 130 may be different from thicknesses ofthe others. The first redistribution line insulating layer 110 may havea first thickness t3, the second redistribution line insulating layer120 may have a second thickness t2, and the third redistribution lineinsulating layer 130 may have a third thickness t1. For example, thefirst thickness t3 may be less than each of the second and thirdthicknesses t2 and t1. That is, the first redistribution line insulatinglayer 110 may be thinner than each of the second and thirdredistribution line insulating layers 120 and 130. In some embodiments,the second thickness t2 and the third thickness t1 may be the same orsubstantially the same as each other, but are not limited thereto. Thatis, the second redistribution line insulating layer 120 and the thirdredistribution line insulating layer 130 may have the same orsubstantially the same thickness as each other, but are not limitedthereto.

According to the fan-out semiconductor package 1 according to theinventive concepts, the side surfaces of the redistribution linestructure 100, that is, the first through third side surfaces SS1through SS3 of the first through third redistribution line insulatinglayers 110 through 130, respectively, may be covered by the moldingmember 300. Thus, interfaces between the plurality of redistributionline insulating layers 110 through 130, for example, the interfacebetween the first and second redistribution line insulating layers 110and 120 and the interface between the second and third redistributionline insulating layers 120 and 130, may not be exposed to the outside.

In particular, when a plurality of fan-out semiconductor packages areformed altogether and the plurality of fan-out semiconductor packagesare separated into separate fan-out semiconductor packages by performinga sawing process, a cutting process is performed on the molding member300, rather than the redistribution line structure 100, and thus, damageto the plurality of redistribution line insulating layers 110 through130 may be reduced or prevented. Accordingly, the plurality ofredistribution line insulating layers 110 through 130 may not bedetached, or cracks in the plurality of redistribution line insulatinglayers 110 through 130 may be reduced or prevented. Thus, the fan-outsemiconductor package 1 having reliability may be provided.

FIGS. 2A through 2L are cross-sectional views for sequentiallydescribing a method of manufacturing a fan-out semiconductor package,according to at least one embodiment. In detail, FIGS. 2A through 2L arethe cross-sectional views for sequentially describing the method ofmanufacturing the fan-out semiconductor package 1 illustrated in FIGS.1A and 1B, by showing a process of manufacturing two fan-outsemiconductor packages together, wherein only a portion of each of thetwo fan-out semiconductor packages, the portion being adjacent to eachother, is illustrated.

Referring to FIG. 2A, the first redistribution insulating layer 110having a first separate space SP1 may be formed on a carrier substrate10 to which a release film 20 is coupled. Although described below, thefirst separate space SP1 is an area at which a package sawing process isperformed to separate two fan-out semiconductor packages formed togetherinto separate fan-out semiconductor packages.

The carrier substrate 10 may support an organic insulating layer and mayinclude a material having the stability for a baking process and anetching process. When the carrier substrate 10 is to be later separatedand removed by using laser ablation, the carrier substrate 10 may be atransparent substrate. Selectively, when the carrier substrate 10 is tobe later separated and removed by heating, the carrier substrate 10 mayinclude a heat-resistant substrate. In some embodiments, the carriersubstrate 10 may include a glass substrate. In other embodiments, thecarrier substrate 10 may include, but is not limited to, aheat-resistance organic polymer material, such as polyimide (PI),polyether etherketone (PEEK), polyether sulfone (PES), polyphenylenesulfide (PPS), etc.

The release film 20 may include, for example, a laser-reactive layerwhich may be later vaporized by reacting with the radiation of a laserbeam, so as to separate the carrier substrate 10. The release film 20may include a carbon-based material layer. For example, the release film20 may include an amorphous carbon layer (ACL), or a spin-on hard (SOH)mask including a hydrocarbon compound having a relatively high carboncontent of about 85 weight % through about 99 weight % or derivativesthereof.

The first redistribution line insulating layer 110 may have the firstside surface SS1 at a side of the first separate space SP1. The firstside surface SS1 may be an inclined surface having an acute angle from anormal line with respect to a circumferential surface of the carriersubstrate 10 or a normal line with respect to a lower surface of thefirst redistribution line insulating layer 110.

Referring to FIG. 2B, a first preliminary seed layer 112P may be formed.The first preliminary seed layer 112P may be conformally formed to coveran upper surface of the first redistribution line insulating layer 110,the first side surface SS1, which is an inner side surface of the firstseparate space SP1, and a lower surface of the first separate space SP1.

Referring to FIG. 2C, a mask pattern MK having an opening OP may beformed on the first preliminary seed layer 112P. The mask pattern MK maycompletely cover the first separate space SP1 and the opening OP mayoverlap a portion of the first redistribution line insulating layer 110.

Referring to FIG. 2D, the first redistribution line pattern 114 may beformed on a portion of the first preliminary seed layer 112P, theportion being exposed in the opening OP, by performing electrolessplating.

Referring to FIGS. 2D and 2E together, the mask pattern MK may beremoved and a portion of the first preliminary seed layer 112P, theportion being exposed by removing the mask pattern MK, may be removed toform the first seed layer 112. The first seed layer 112 may be betweenthe first redistribution line pattern 114 and the first redistributionline insulating layer 110.

Referring to FIG. 2F, a redistribution line insulating material layer120 p may be formed on a resultant structure of FIG. 2E. Theredistribution line insulating material layer 120 p may completely coverthe first redistribution line pattern 114. The redistribution lineinsulating material layer 120 p may include a material layer includingan organic compound. In some embodiments, the redistribution lineinsulating material layer 120 p may include a material layer includingan organic polymer material. In some embodiments, the redistributionline insulating material layer 120 p may include a polymer materialhaving negative photosensitivity. In some embodiments, theredistribution line insulating material layer 120 p may include aphotosensitive PI resin having negative photosensitivity.

In some embodiments, the redistribution line insulating material layer120 p may be formed by spin coating and soft baking. The soft baking maybe performed, for example, by performing a heating process at atemperature of about 150° C. to about 350° C. for about 10 seconds toabout 5 minutes, but is not limited thereto.

In some embodiments, the redistribution line insulating material layer120 p may have a generally flat upper surface at a portion thereof, theportion overlapping the first redistribution line insulating layer 110,and a concave supper surface at a portion thereof, the portionoverlapping the first separate space SPI (refer to FIG. 2E).

Referring to FIG. 2G, the second redistribution line insulating layer120 having the first via opening VO1 and a second separate space SP2 maybe formed by exposing and developing the redistribution line insulatingmaterial layer 120 p (refer to FIG. 2F). The second separate space SP2may be connected to the first separate space SP1. A portion of the firstredistribution line pattern 114 may be exposed at a lower surface of thefirst via opening VO1.

The second redistribution line insulating layer 120 may have the secondside surface SS2 at a side of the second separate space SP2. The secondside surface SS2 may be an inclined surface having an acute angle fromthe normal line with respect to the circumferential surface of thecarrier substrate 10 or a normal line with respect to a lower surface ofthe second redistribution line insulating layer 120.

The second redistribution line insulating layer 120 may be formed byusing substantially the same method as the first redistribution lineinsulating layer 110 illustrated in FIG. 2A.

Referring to FIG. 2H, the processes described with reference to FIGS. 2Bthrough 2G may be repeatedly performed to form the second seed layer122, the second redistribution line pattern 124, the firstredistribution line via pattern 126, the third redistribution lineinsulating layer 130 having the second via opening VO2 and a thirdseparate space SP3, the third seed layer 132, the third redistributionline pattern 134, and the first redistribution line via pattern 136.

The second redistribution line pattern 124 and the first redistributionline via pattern 126 may be integrally formed with each other, and thefirst redistribution line via pattern 126 may fill the first via openingVO1. The third redistribution line pattern 134 and the secondredistribution line via pattern 136 may be integrally formed, and thesecond redistribution line via pattern 136 may fill the second viaopening VO2.

The third separate space SP3 may be connected to the second separatespace SP2 and the first separate space SP1. The third redistributionline insulating layer 130 may have the third side surface SS3 at a sideof the third separate space SP3. The third side surface SS3 may be aninclined surface having an acute angle from the normal line with respectto the circumferential surface of the carrier substrate 10 or a normalline with respect to a lower surface of the third redistribution lineinsulating layer 130.

The plurality of redistribution line insulating layers 110, 120, and 130included in the redistribution line structure 100 may be formed to havea cascade structure, in which the plurality of redistribution lineinsulating layers 110, 120, and 130 increase in width away from thecarrier substrate 10. Each of the plurality of redistribution lineinsulating layers 110, 120, and 130 may increase in width away from thecarrier substrate 10.

Referring to FIG. 2I, the semiconductor chip 200 may be coupled on theredistribution line structure 100. The semiconductor chip 200 may becoupled to the redistribution line structure 100 such that the chip pad220 arranged on an active surface of the semiconductor substrate 210 istoward the redistribution line structure 100. The chip pad 220 of thesemiconductor chip 200 may be connected to the third redistribution linepattern 134 of the redistribution line structure 100 via the chipconnection member 230.

The underfill material layer 250 surrounding the chip connection member230 may be filled between the semiconductor chip 200 and theredistribution line structure 100. The underfill material layer 250 maybe formed by using a capillary tube underfill method, after thesemiconductor chip 200 is coupled to the redistribution line structure100. In some embodiments, the underfill material layer 250 may be formedby coupling the semiconductor chip 200 on the redistribution linestructure 100, after coupling an NCF on the chip pad 220 of thesemiconductor chip 200.

Referring to FIG. 2J, the molding member 300 surrounding side surfacesand an upper surface of the semiconductor chip 200 may be formed on theredistribution line structure 100 to which the semiconductor chip 200 iscoupled. The molding member 300 may include, for example, an EMC. Themolding member 300 may fill the first through third separate spaces SP1,SP2, and SP3 (refer to FIG. 2H), and may contact a portion of therelease film 20, the portion being below the first through thirdseparate spaces SP1 through SP3, the first through third side surfacesSS1, SS2, and SS3 (refer to FIG. 2H) of the first through thirdredistribution line insulating layers 110 through 130, respectively, anupper surface of the third redistribution line insulating layer 130, andthe side surfaces and the upper surface of the semiconductor chip 200.

Referring to FIGS. 2J and 2K together, based on a resultant structure ofFIG. 2J, the carrier substrate 10 to which the release film 20 iscoupled may be separated from the redistribution line structure 100.Thereafter, a portion of the first redistribution line insulating layer110 may be removed to form a pad opening PO, through which the firstseed layer 112 and the first redistribution line pattern 114 arepartially exposed, and the external connection terminal 400 may becoupled to the first seed layer 112 and the first redistribution linepattern 114 via the pad opening PO.

Referring to FIG. 2L, a package sawing process may be performed on aresultant structure of FIG. 2K, to form the fan-out semiconductorpackages 1 separated with a kerf space KE therebetween.

The package sawing process may be performed by cutting the moldingmember 300 and forming the kerf space KE in the molding member 300.Thus, the kerf space KE may be spaced apart from the side surfaces ofthe redistribution line structure 100, that is, the first through thirdside surfaces SS1 through SS3 (refer to FIG. 1B) of the first throughthird redistribution insulating layers 110 through 130, respectively.Thus, the first through third side surfaces SS1 through SS3 of the firstthrough third redistribution line insulating layers 110 through 130,respectively, may be covered by the molding member 300. Thus, interfacesbetween the plurality of redistribution line insulating layers 110through 130, for example, the interface between the first and secondredistribution line insulating layers 110 and 120 and the interfacebetween the second and third redistribution line insulating layers 120and 130 may not be exposed to the outside.

Thus, in the process of manufacturing the fan-out semiconductor package1, damage to the plurality of redistribution line insulating layers 110through 130 may be reduced or prevented, and thus, the plurality ofredistribution line insulating layers 110 through 130 may be reduced orprevented from being detached or cracks may be reduced or prevented fromoccurring in the plurality of redistribution line patterns 114, 124, and134.

FIG. 3 is a cross-sectional view of a fan-out semiconductor package 1 aaccording to at least one embodiment. Descriptions of aspects withrespect to FIG. 3, the aspects being the same as those with respect toFIGS. 1A and 1B, will be omitted, and aspects with respect to FIG. 3,the aspects being different from those with respect to FIGS. 1A and 1B,will be mainly described.

Referring to FIG. 3, the fan-out semiconductor package 1 a may includethe redistribution line structure 100 and a plurality of semiconductorchips 200 a that are spaced apart from each other on the redistributionline structure 100.

The plurality of semiconductor chips 200 a may include a firstsemiconductor chip 202 and a second semiconductor chip 204. The firstsemiconductor chip 202 may include, for example, a CPU chip, a GPU chip,or an AP chip. The second semiconductor chip 204 may include, forexample, a DRAM chip, an SRAM chip, a flash memory chip, an EEPROM chip,a PRAM chip, an MRAM chip, or an RRAM chip. In some embodiments, thesecond semiconductor chip 204 may be a high bandwidth memory (HBM) DRAMsemiconductor chip.

A footprint occupied by the plurality of semiconductor chips 200 a maybe less than a horizontal area of the redistribution line structure 100.The total footprint occupied by the plurality of semiconductor chips 200a may overlap the redistribution line structure 100 in a verticaldirection.

A horizontal width W4 a of the footprint occupied by the plurality ofsemiconductor chips 200 a may be less than each of the horizontal widthW1 of the first redistribution line insulating layer 110, the horizontalwidth W2 of the second redistribution line insulating layer 120, thehorizontal width W3 of the third redistribution line insulating layer130, and the horizontal width W5 of the molding member 300.

FIG. 4 is a cross-sectional view of a fan-out semiconductor package 1 baccording to at least one embodiment. Descriptions of aspects withrespect to FIG. 4, the aspects being the same as those with respect toFIGS. 1A and 1B, will be omitted, and aspects with respect to FIG. 4,the aspects being different from those with respect to FIGS. 1A and 1B,will be mainly described.

Referring to FIG. 4, the fan-out semiconductor package 1 b may includethe redistribution line structure 100 and the semiconductor chip 200 onthe redistribution line structure 100.

The fan-out semiconductor package 1 b may farther include a moldingmember 300 a surrounding the semiconductor chip 200 on theredistribution line structure 100. The molding member 300 a may surroundan upper surface of the redistribution line structure 100 and sidesurfaces of the semiconductor chip 200 but may not cover and may exposean upper surface of the semiconductor chip 200, the upper surface beinga non-active surface. The molding member 300 a may cover a portion of anupper surface and a side surface of each of the plurality ofredistribution line insulating layers 110, 120, and 130 included in theredistribution line structure 100.

In some embodiments, a heat discharging member may be coupled on theupper surface of the semiconductor chip 200. The heat discharging membermay be, for example, a heat slug or a heat sink. In some embodiments, athermal interface material (TIM) may be arranged between the heatdischarging member and the upper surface of the semiconductor chip 200.The TIM may include, for example, mineral oil, grease, gap filler putty,phase change gel, phase change material pads, or particle filled epoxy.

FIGS. 5A and 5B are cross-sectional views of a fan-out semiconductorpackage 2 according to at least one embodiment. In detail, FIG. 5B is anenlarged cross-sectional view of a region Vb of FIG. 5A.

Referring to FIGS. 5A and 5B together, the fan-out semiconductor package2 may include a redistribution line structure 100 a and thesemiconductor chip 200 on the redistribution line structure 100 a.

The redistribution line structure 100 a may include a plurality ofredistribution line insulating layers 110 a, 120 a, and 130 a, aplurality of redistribution line patterns 114 a and 124 a arranged atleast one of an upper surface and a lower surface of each of theplurality of redistribution line insulating layers 110 a, 120 a, and 130a, and a plurality of redistribution line via patterns 116 a and 126 apenetrating at least one of the plurality of redistribution lineinsulating layers 110 a, 120 a, and 130 a and connected to at least oneof the plurality of redistribution line patterns 114 a and 124 a bycontacting the at least one of the plurality of redistribution linepatterns 114 a and 124 a.

A plurality of seed layers 112 a and 122 a may be between each of theplurality of redistribution line patterns 114 a and 124 a and theplurality of redistribution line via patterns 116 a and 126 a, and anyone of the plurality of redistribution line insulating layers 110 a, 120a, and 130 a.

The plurality of redistribution line insulating layers 110 a, 120 a, and130 a, the plurality of seed layers 112 a and 122 a, the plurality ofredistribution line patterns 114 a and 124 a, and the plurality ofredistribution line via patterns 116 a and 126 a may be generally thesame as the plurality of redistribution line insulating layers 110, 120,and 130, the plurality of seed layers 112, 122, and 123, the pluralityof redistribution line patterns 114, 124, and 134, and the plurality ofredistribution line via patterns 126 and 136, described with referenceto FIGS. 1A and 1B, and thus, detailed descriptions will not be given,and different aspects will be mainly described.

At least one of the plurality of redistribution line patterns 114 a and124 a may be integrally formed with at least one of the plurality ofredistribution line via patterns 116 a and 126 a. For example, at leastone of the plurality of redistribution line patterns 114 a and 124 a maybe integrally formed with at least one of the plurality ofredistribution line via patterns 116 a and 126 a, the at least one ofthe plurality of redistribution line via patterns 116 a and 126 acontacting an upper portion of the at least one of the plurality ofredistribution line patterns 114 a and 124 a, or may be integrallyformed with at least one of the plurality of redistribution line viapatterns 116 a and 126 a, the at least one of the plurality ofredistribution line via patterns 116 a and 126 a contacting a lowerportion of the at least one of the plurality of redistribution linepatterns 114 a and 124 a.

The plurality of redistribution line insulating layers 110 a, 120 a, and130 a may include a first redistribution line insulating layer 110 a, asecond redistribution line insulating layer 120 a, and a thirdredistribution line insulating layer 130 a, which are sequentiallystacked. The plurality of seed layers 112 a and 122 a may include afirst seed layer 112 a and a second seed layer 122 a contacting thefirst and second redistribution line insulating layers 110 a and 120 a,respectively. The plurality of redistribution line patterns 114 a and124 a may include a first redistribution line pattern 114 a below thefirst redistribution line insulating layer 110 a, and a secondredistribution line pattern 124 a above the second redistribution lineinsulating layer 120 a. The plurality of redistribution line viapatterns 116 a and 126 a may include a first redistribution line viapattern 116 a on the first redistribution line pattern 114 a and asecond redistribution line via pattern 126 a on the secondredistribution line pattern 124 a.

A structure of the redistribution line structure 100 a will be describedin detail. The first seed layer 112 a may be arranged on a portion of alower surface of the first redistribution line insulating layer 110 ahaving a first via opening VO1 a, through which a portion of a lowersurface of the chip pad 220 of the semiconductor chip 200 is exposed, aninner side surface of the first via opening VO1 a, and the portion ofthe lower surface of the chip pad 220, the portion being exposed throughthe first via opening VO1 a. The first redistribution line via pattern116 a and the first redistribution line pattern 114 a may be arranged onthe first seed layer 112 a. The first redistribution line via pattern116 a may cover a portion of the first seed layer 112 a, the portionbeing in the first via opening VO1 a, and may fill the first via openingVO1 a. The first redistribution line pattern 114 a may be arranged on aportion of the first seed layer 112 a, the portion being on the lowersurface of the first redistribution line insulating layer 110 a, and maybe arranged on the first redistribution line via pattern 116 a.

The first seed layer 112 a may be between the first redistribution linepattern 114 a and the first redistribution line via pattern 116 a, andthe first redistribution line insulating layer 110 a, and between thefirst redistribution line via pattern 116 a and the chip pad 220. Thefirst redistribution line via pattern 116 a and the first redistributionline pattern 114 may be integrally formed.

The second redistribution line insulating layer 120 a including a secondvia opening VO2 a may be stacked on the lower surface of the firstredistribution line insulating layer 110 a, wherein the second viaopening VO2 a covers a portion of the first redistribution line pattern114 a and exposes the remaining portions of the first redistributionline pattern 114 a. A horizontal width W2 a of the second redistributionline insulating layer 120 a may be less than a horizontal width W1 a ofthe first redistribution line insulating layer 110 a.

The second seed layer 122 a may be arranged on a portion of a lowersurface of the second redistribution line insulating layer 120 a havingthe second via opening VO2 a, through which a portion of a lower surfaceof the first redistribution line pattern 114 a is exposed, an inner sidesurface of the second via opening VO2 a, and the portion of the lowersurface of the first redistribution line pattern 114 a, the portionbeing exposed through the second via opening VO2 a. The secondredistribution line via pattern 126 a and the second redistribution linepattern 124 a may be arranged on the second seed layer 122 a. The secondredistribution line via pattern 126 a may cover a portion of the secondseed layer 122 a, the portion being in the second via opening VO2 a, andmay fill the second via opening VO2 a. The second redistribution linepattern 124 a may be arranged on a portion of the second seed layer 122a, the portion being on the lower surface of the second redistributionline insulating layer 120 a, and may be arranged on the secondredistribution line via pattern 126 a.

The second seed layer 122 a may be between the second redistributionline pattern 124 a and the second redistribution line via pattern 126 a,and the second redistribution line insulating layer 120 a, and betweenthe second redistribution line via pattern 126 a and the portion of thelower surface of the first redistribution line pattern 114 a, theportion being exposed through the second via opening VO2 a. The secondredistribution line via pattern 126 a and the second redistribution linepattern 124 a may be integrally formed.

The third redistribution line insulating layer 130 a including a thirdvia opening VO3 a may be stacked on a lower surface of the secondredistribution line insulating layer 120 a, wherein the third viaopening VO3 a covers a portion of the second redistribution line pattern124 a and exposes the remaining portions of the second redistributionline pattern 124 a. A horizontal width W3 a of the third redistributionline insulating layer 130 a may be less than the horizontal width W2 aof the second redistribution line insulating layer 120 a.

FIG. 5A illustrates that the redistribution line structure 100 aincludes the three redistribution line insulating layers 110 a, 120 a,and 130 a, the two redistribution line patterns 114 a and 124 a, and thetwo redistribution line via patterns 116 a and 126 a. However, theredistribution line structure 100 a is not limited thereto, and may bevariously modified according to a design of circuit wires in theredistribution structure 100 a.

For example, the redistribution line structure 100 a may include morethan two, three, or four redistribution line insulating layers. Forexample, the redistribution line structure 100 a may have theredistribution line patterns, the number of which is less than thenumber of the redistribution line insulating layers by one, the numberof which is the same as the number of the redistribution line insulatinglayers, or the number of which is greater than the number of theredistribution line insulating layers by one. For example, theredistribution line structure 100 a may have the redistribution line viapatterns, the number of which is less than the number of theredistribution line insulating layers by two, the number of which isless than the number of the redistribution line insulating layers byone, or the number of which is the same as the number of theredistribution line insulating layers.

In some embodiments, a portion of a lowermost redistribution linepattern of the redistribution line patterns 114 a and 124 a, forexample, a portion of the second redistribution line pattern 124 a mayperform a function of a terminal connection pad to which an externalconnection terminal 400 a is coupled.

The semiconductor chip 200 may be coupled on the redistribution linestructure 100 a. The horizontal width W4 of the semiconductor chip 200may be less than the horizontal width W3 a of the third redistributionline insulating layer 130.

The redistribution line structure 100 a may protrude farther outsidethan the semiconductor chip 200 in a horizontal direction. For example,each of the first through third redistribution line insulating layers110 a through 130 a included in the redistribution line structure 100 amay protrude farther outside than the semiconductor chip 200 in thehorizontal direction.

In some embodiments, at least one of the plurality of redistributionline patterns 114 a and 124 a included in the redistribution linestructure 100 a may protrude farther outside than the semiconductor chip200 in the horizontal direction. For example, FIG. 1 illustrates that aportion of the first redistribution line pattern 114 a and a portion ofthe second redistribution line pattern 124 a protrude farther outsidethan the semiconductor chip 200 in the horizontal direction. However,the inventive concepts are not limited thereto. For example, a portionof the second redistribution line pattern 124 a of the plurality ofredistribution line patterns 114 a and 124 a may protrude fartheroutside than the semiconductor chip 200 in the horizontal direction.

The semiconductor chip 200 may include a semiconductor substrate 210 andthe chip pad 220 arranged on a surface of the semiconductor substrate210.

The first redistribution line via pattern 116 a may be electricallyconnected to the chip pad 220 of the semiconductor chip 200. The firstseed layer 112 a may be between the chip pad 220 and the firstredistribution line via pattern 116 a.

The fan-out semiconductor package 2 may farther include the moldingmember 300 surrounding the semiconductor chip 200 on the redistributionline structure 100 a. The molding member 300 may surround an uppersurface of the redistribution line structure 100 a and side surfaces andan upper surface of the semiconductor chip 200. The molding member 300may cover a portion of an upper surface of the first redistribution lineinsulating layer 110 a from among the plurality of redistribution lineinsulating layers 110 a, 120 a, and 130 a included in the redistributionline structure 100 a. The molding member 300 may not cover a sidesurface of each of the plurality of redistribution line insulatinglayers 110 a, 120 a, and 130 a.

The molding member 300 may protrude farther outside than theredistribution line structure 100 a in the horizontal direction. Ahorizontal width W5 of the molding member 300 may be greater than thehorizontal width W1 a of the first redistribution line insulating layer110 a. That is, the horizontal width W5 of the molding member 300 may begreater than a total horizontal width of the redistribution linestructure 100 a.

A lower surface of the molding member 300, and an upper surface of theredistribution line structure 100 a, for example, an upper surface ofthe first redistribution line insulating layer 110 a, may be at a samelevel. Also, the lower surface of the molding member 300 and the uppersurface of the redistribution line structure 100 a, for example, theupper surface of the first redistribution line insulating layer 110 a,may be coplanar.

A side surface of each of the plurality of redistribution lineinsulating layers 110 a through 130 a may be an inclined surface havingan acute angle (between 0° and 90°) from a normal line with respect toan upper surface of each of the plurality of redistribution lineinsulating layers 110 a through 130 a. The first through thirdredistribution line insulating layers 110 a through 130 a may have afirst side surface SS1 a, a second side surface SS2 a, and a third sidesurface SS3 a, respectively.

The first side surface SS1 a of the first redistribution line insulatinglayer 110 a may be an inclined surface having a first angle θ1 a fromthe normal line with respect to the upper surface of the firstredistribution line insulating layer 110 a. The second side surface SS2a of the second redistribution line insulating layer 120 a may be aninclined surface having a second angle θ2 a from the normal line withrespect to the upper surface of the second redistribution lineinsulating layer 120 a. The third side surface SS3 a of the thirdredistribution line insulating layer 130 a may be an inclined surfacehaving a third angle θ3 a from the normal line with respect to the uppersurface of the third redistribution line insulating layer 130 a.

Any one of the first through third angles θ1 a through θ3 a may have adifferent value from the others. That is, any one of the first throughthird side surfaces SS1 a through SS3 a may be an inclined surfacehaving a different inclination from the others. For example, the firstangle θ1 a may be less than each of the second and third angles θ2 a andθ3 a. That is, the first side surface SS1 a may be a more steeplyinclined surface than the second and third side surfaces SS2 a and SS3a. In some embodiments, the second and third angles θ2 a and θ3 a may bethe same or substantially the same, but it is not limited thereto. Thatis, the second and third side surfaces SS2 a and SS3 a may be theinclined surfaces having the same or substantially the same inclination,but it is not limited thereto.

A thickness of any one of the plurality of redistribution lineinsulating layers 110 a through 130 a may be different from thicknessesof the others. The first redistribution line insulating layer 110 a mayhave a first thickness t1 a, the second redistribution line insulatinglayer 120 a may have a second thickness t2 a, and the thirdredistribution line insulating layer 130 a may have a third thickness t3a. For example, the first thickness t1 a may be less than each of thesecond and third thicknesses t2 a and t3 a. That is, the firstredistribution line insulating layer 110 a may be thinner than each ofthe second and third redistribution line insulating layers 120 a and 130a. In some embodiments, the second thickness t2 a and the thirdthickness t3 a may be the same or substantially the same as each other,but are not limited thereto. That is, the second redistribution lineinsulating layer 120 a and the third redistribution line insulatinglayer 130 a may have the same or substantially the same thickness aseach other, but are not limited thereto.

The fan-out semiconductor package 2 according to the inventive conceptsmay be formed such that the molding member 300 may not cover the sidesurface of the redistribution line structure 100 a, that is, the firstthrough third side surfaces SS1 a through SS3 a of the first throughthird redistribution line insulating layers 110 a through 130 a,respectively, and the molding member 300 may protrude farther outsidethan the redistribution line structure 100 a in the horizontaldirection.

When a plurality of fan-out semiconductor packages are formed altogetherand the plurality of fan-out semiconductor packages are separated intoseparate fan-out semiconductor packages by performing a sawing process,the cutting process is performed on the molding member 300, and theredistribution line structure 100 a is apart from a cutting surface ofthe molding member 300. Thus, damage to the plurality of redistributionline insulating layers 110 a through 130 a may be reduced or prevented.Accordingly, the plurality of redistribution line insulating layers 110a through 130 a may be reduced or prevented from being detached oroccurrence of cracks in the plurality of redistribution line patterns114 a and 124 a may be reduced or prevented, to provide the fan-outsemiconductor package 2 having improved reliability.

FIGS. 6A through 6F are cross-sectional views for sequentiallydescribing a method of manufacturing a fan-out semiconductor package,according to at least one embodiment. In detail, FIGS. 6A through 6F arethe cross-sectional views for sequentially describing the method ofmanufacturing the fan-out semiconductor package 2 illustrated in FIGS.5A and 5B, by showing a process of manufacturing two fan-outsemiconductor packages together, wherein only a portion of each of thetwo fan-out semiconductor packages, the portion being adjacent to eachother, is illustrated, and unlike FIGS. 5A and 5B in which the activesurface of the semiconductor substrate 210 is the lower surface, anactive surface of the semiconductor substrate 210 is an upper surface.

Referring to FIG. 6A, the molding member 300 surrounding side surfacesand a lower surface of the semiconductor chip 200 having the chip pad220 arranged on the active surface, which is the upper surface, of thesemiconductor substrate 210, may be formed.

Referring to FIG. 6B, after forming the first redistribution lineinsulating layer 110 a having the first via opening VO1 a and the firstseparate space SP1 a on the semiconductor chip 200, the side surfacesand the lower surface of which are covered by the molding member 300, afirst preliminary seed layer 112Pa may be formed. The first preliminaryseed layer 112Pa may be conformally formed to cover an upper surface ofthe first redistribution line insulating layer 110 a, an inner sidesurface of the first separate space SP1 a, and a lower surface of thefirst separate space SP1 a.

The first redistribution line insulating layer 110 a may have the firstside surface SS1 a at a side of the first separate space SP1 a. Thefirst side surface SS1 a may be an inclined surface having an acuteangle from a normal line with respect to a lower surface of the firstredistribution line insulating layer 110 a.

Referring to FIG. 6C, a mask pattern MKa having an opening OPa may beformed on the first preliminary seed layer 112Pa. The mask pattern MKamay completely cover the first separate space SP1 a and the opening OPamay be connected to the first via opening VO1 a. Thereafter, byperforming electroless plating, the first redistribution line pattern114 a and the first redistribution via pattern 116 a may be formed on aportion of the first preliminary seed layer 112Pa, the portion beingexposed in the opening OPa.

The first redistribution line pattern 114 a and the first redistributionline via pattern 116 a may be integrally formed with each other, and thefirst redistribution line via pattern 116 a may cover the first viaopening VO1 a.

Referring to FIGS. 6C and 6D together, the mask pattern MK may beremoved and a portion of the first preliminary seed layer 112Pa, theportion being exposed by removing the mask pattern MKa, may be removedto form the first seed layer 112 a.

Referring to FIG. 6E, the second redistribution line insulating layer120 a having a second via opening VO2 a and a second separate space SP2a, the second seed layer 122 a, the second redistribution line pattern124 a, the second redistribution line via pattern 126 a, and the thirdredistribution line insulating layer 130 a having a third separate spaceSP3 a and a pad opening POa may be formed on a resultant structure ofFIG. 6D. The first separate space SP1 a may be connected to the secondand third separate spaces SP2 a and SP3 a.

The second redistribution line pattern 124 a and the secondredistribution line via pattern 126 a may be integrally formed with eachother, and the second redistribution line via pattern 126 a may fill thesecond via opening VO2 a.

The second redistribution line insulating layer 120 a may have thesecond side surface SS2 a at a side of the second separate space SP2 a.The second side surface SS2 a may be an inclined surface having an acuteangle from a normal line with respect to a lower surface of the secondredistribution line insulating layer 120 a.

The third redistribution line insulating layer 130 a may have the thirdside surface SS3 a at a side of the third separate space SP3 a. Thethird side surface SS3 a may be an inclined surface having an acuteangle from a normal line with respect to a lower surface of the thirdredistribution line insulating layer 130 a.

The plurality of redistribution line insulating layers 110 a, 120 a, and130 a included in the redistribution line structure 100 a may be formedto have a cascade structure in which the plurality of redistributionline insulating layers 110 a, 120 a, and 130 a increase in width awayfrom the semiconductor chip 200 and the molding member 300. Each of theplurality of redistribution line insulating layers 110 a, 120 a, and 130a may increase in width away from the semiconductor chip 200 and themolding member 300.

Referring to FIG. 6F, a package sawing process may be performed on aresultant structure of FIG. 6E, to form the fan-out semiconductorpackages 2 separated with a kerf space KE therebetween.

The package sawing process may be performed by cutting the moldingmember 300 and forming the kerf space KE in the molding member 300.Thus, the kerf space KE may be spaced apart from the side surfaces ofthe redistribution line structure 100 a, that is, the first throughthird side surfaces SS1 a through SS3 a of the first through thirdredistribution insulating layers 110 a through 130 a, respectively.

Thus, damage to the plurality of redistribution line insulating layers110 a through 130 a may be reduced or prevented in the package sawingprocess of the fan-out semiconductor package 2 so that the plurality ofredistribution line insulating layers 110 a through 130 a may not bedetached or cracks may not occur in the plurality of redistribution linepatterns 114 a, 124 a, and 134 a.

FIG. 7 is a cross-sectional view of a fan-out semiconductor package 2 a,according to at least one embodiment. Descriptions of aspects withrespect to FIG. 7, the aspects being the same as those with respect toFIGS. 5A and 5B, will be omitted, and aspects with respect to FIG. 7,the aspects being different from those with respect to FIGS. 5A and 5B,will be mainly described.

Referring to FIG. 7, the fan-out semiconductor package 2 a may includethe redistribution line structure 100 a and the plurality ofsemiconductor chips 200 a spaced apart from each other on theredistribution line structure 100 a.

The plurality of semiconductor chips 200 a may include the firstsemiconductor chip 202 and the second semiconductor chip 204. The firstsemiconductor chip 202 may be, for example, a CPU chip, a GPU chip, oran AP chip. The second semiconductor chip 204 may be, for example, aDRAM chip, an SRAM chip, a flash memory chip, an EEPROM chip, a PRAMchip, an MRAM chip, or an RRAM chip. In some embodiments, the secondsemiconductor chip 204 may be an HBM DRAM semiconductor chip.

A footprint occupied by the plurality of semiconductor chips 200 a maybe less than a horizontal area of the redistribution line structure 100a. The footprint occupied by the plurality of semiconductor chips 200 amay completely overlap the redistribution line structure 100 a in avertical direction.

The horizontal width W4 a of the footprint occupied by the plurality ofsemiconductor chips 200 a may be less than each of the horizontal widthW1 a of the first redistribution line insulating layer 110 a, thehorizontal width W2 a of the second redistribution line insulating layer120 a, the horizontal width W3 a of the third redistribution lineinsulating layer 130 a, and the horizontal width W5 of the moldingmember 300.

FIG. 8 is a cross-sectional view of a fan-out semiconductor package 2 b,according to at least one embodiment. Descriptions of aspects withrespect to FIG. 8, the aspects being the same as those with respect toFIGS. 5A and 5B, will be omitted, and aspects with respect to FIG. 8,the aspects being different from those with respect to FIGS. 5A and 5B,will be mainly described.

Referring to FIG. 8, the fan-out semiconductor package 2 b may includethe redistribution line structure 100 a and the semiconductor chip 200on the redistribution line structure 100 a.

The fan-out semiconductor package 2 b may farther include the moldingmember 300 a surrounding the semiconductor chip 200 on theredistribution line structure 100 a. The molding member 300 a maysurround an upper surface of the redistribution line structure 100 a andside surfaces of the semiconductor chip 200 and may not cover and mayexpose an upper surface of the semiconductor chip 200, the upper surfacebeing a non-active surface. The molding member 300 a may cover a portionof an upper surface of the first redistribution line insulating layer110 a from among the plurality of redistribution line insulating layers110 a, 120 a, and 130 a included in the redistribution line structure100 a. The molding member 300 a may not cover a side surface of each ofthe plurality of redistribution line insulating layers 110 a, 120 a, and130 a.

In some embodiments, a heat discharging member may be coupled on theupper surface of the semiconductor chip 200. The heat discharging membermay be, for example, a heat slug or a heat sink. In some embodiments, aTIM may be arranged between the heat discharging member and the uppersurface of the semiconductor chip 200.

While the inventive concepts have been particularly shown and describedwith reference to embodiments thereof, it will be understood thatvarious changes in form and details may be made therein withoutdeparting from the spirit and scope of the following claims.

What is claimed is:
 1. A method of manufacturing a fan-out semiconductorpackage, the method comprising: forming a redistribution line structureon a carrier substrate, the forming of the redistribution line structurecomprising forming a plurality of redistribution line insulating layers,and forming a plurality of redistribution line patterns on at least oneof an upper surface and a lower surface of each of the plurality ofredistribution line insulating layers, such that each of the pluralityof redistribution line insulating layers has a separate spacecommunicated to each other; attaching a semiconductor chip on theredistribution line structure, the semiconductor chip including asemiconductor substrate and a chip pad on an active surface of thesemiconductor substrate, such that the active surface of thesemiconductor substrate is oriented towards the redistribution linestructure and the chip pad is connected to the plurality ofredistribution line patterns via a chip connection member; forming amolding member on the redistribution line structure such that themolding member fills the separate spaces of the plurality ofredistribution line insulating layers and surrounds the semiconductorchip; separating the redistribution line structure and the semiconductorchip from the carrier substrate; and cutting the molding member to forma kerf space, the kerf space being spaced apart from a side surface ofthe plurality of redistribution line insulating layers, wherein formingeach of the plurality of redistribution line patterns comprises forminga mask pattern on each of the plurality of redistribution lineinsulating layers, the mask pattern completely covering the separatespace and having an opening overlapping a portion of each of theplurality of redistribution line insulating layers, performing plating,and removing the mask pattern, and wherein a horizontal width of aredistribution line insulating layer from among the plurality ofredistribution line insulating layers, farthest from the semiconductorchip, is greater than horizontal widths of a remainder of the pluralityof redistribution line insulating layers.
 2. The method of claim 1,wherein the semiconductor chip has a footprint having a horizontal widththat is less than a horizontal width of the redistribution linestructure.
 3. The method of claim 1, wherein the forming the moldingmember includes forming the molding member such that a horizontal widthof the molding member is greater than a horizontal width of theredistribution line structure, and such that the molding member coversside surfaces of each of the plurality of redistribution line insulatinglayers.
 4. The method of claim 1, wherein the forming of the pluralityof redistribution line insulating layers includes forming the pluralityof redistribution line insulating layers to have a cascade structure. 5.The method of claim 1, wherein forming of the plurality ofredistribution line insulating layers includes forming the plurality ofredistribution line insulating layers such that side surfaces of each ofthe plurality of redistribution line insulating layers are inclinedsurfaces each having an acute angle from a normal line with respect to alower surface of each of the plurality of redistribution line insulatinglayers.
 6. The method of claim 5, wherein an acute angle of a sidesurface of the redistribution line insulating layer farthest from thesemiconductor chip is less than acute angles of side surfaces of theremainder of the plurality of redistribution line insulating layers. 7.The method of claim 1, wherein the forming the molding member includesforming the molding member such that a lower surface of theredistribution line insulating layer farthest from the semiconductorchip is coplanar with a lower surface of the molding member.
 8. Themethod of claim 1, wherein forming of the plurality of redistributionline insulating layers includes forming the plurality of redistributionline insulating layers such that a thickness of at least one of theplurality of redistribution line insulating layers is less thanthicknesses of the remainder of the plurality of redistribution lineinsulating layers.
 9. The method of claim 8, wherein forming of theplurality of redistribution line insulating layers includes forming theplurality of redistribution line insulating layers such that a thicknessof the redistribution line insulating layer farthest from thesemiconductor chip is less than thicknesses of the remainder of theplurality of redistribution line insulating layers.
 10. The method ofclaim 1, wherein forming of the plurality of redistribution lineinsulating layers includes forming the plurality of redistribution lineinsulating layers such that at least one of the plurality ofredistribution line patterns protrudes, in a horizontal direction,farther outside of a footprint of the semiconductor chip.
 11. A methodof manufacturing a fan-out semiconductor package, the method comprising:forming a redistribution line structure, the forming of theredistribution line structure comprising forming a plurality ofredistribution line insulating layers, and forming a plurality ofredistribution line patterns on at least one of an upper surface and alower surface of each of the plurality of redistribution line insulatinglayers, such that each of the plurality of redistribution lineinsulating layers has a separate space communicated to each other;attaching a semiconductor chip on the redistribution line structure;forming a molding member on the redistribution line structure such thatthe molding member fills the separate spaces of the plurality ofredistribution line insulating layers and surrounds the semiconductorchip; and cutting the molding member to form a kerf space, the kerfspace being spaced apart from the plurality of redistribution lineinsulating layers, wherein each of the plurality of redistribution linepatterns has a one portion and another portion separated with theseparate space therebetween, and wherein a horizontal width of aredistribution line insulating layer from among the plurality ofredistribution line insulating layers, farthest from the semiconductorchip, is greater than a horizontal width of the redistribution lineinsulating layer closer to the semiconductor chip.
 12. The method ofclaim 11, wherein the forming of the plurality of redistribution lineinsulating layers includes forming the plurality of redistribution lineinsulating layers to have a cascade structure.
 13. The method of claim11, wherein forming of the plurality of redistribution line insulatinglayers includes forming the plurality of redistribution line insulatinglayers such that side surfaces of each of the plurality ofredistribution line insulating layers are inclined surfaces each havingan acute angle from a normal line with respect to a lower surface ofeach of the plurality of redistribution line insulating layers.
 14. Themethod of claim 13, wherein an acute angle of a side surface of theredistribution line insulating layer farthest from the semiconductorchip is less than acute angles of side surfaces of the remainder of theplurality of redistribution line insulating layers.
 15. The method ofclaim 11, wherein the semiconductor chip has a semiconductor substrateand a chip pad arranged on an active surface of the semiconductorsubstrate, and the attaching the semiconductor chip includes orientingthe semiconductor chip such that the active surface of the semiconductorsubstrate is towards the redistribution line structure, and the chip padis connected to the plurality of redistribution line patterns via a chipconnection member.
 16. The method of claim 11, wherein the forming ofthe plurality of redistribution line patterns comprises: forming a maskpattern having an opening on each of the plurality of redistributionline insulating layers such that the mask pattern completely fills theseparate space and the opening of the mask pattern overlaps a portion ofeach of the plurality of redistribution line insulating layers,performing plating, and removing the mask pattern.
 17. The method ofclaim 11, wherein the forming of the molding member includes forming themolding member such that the molding member has a horizontal width thatis greater than a horizontal width of the redistribution line structureand covers side surfaces of each of the plurality of redistribution lineinsulating layers.
 18. The method of claim 11, wherein the forming themolding member includes forming the molding member such that a lowersurface of the redistribution line insulating layer farthest from thesemiconductor chip is coplanar with a lower surface of the moldingmember.
 19. The method of claim 11, wherein forming of the plurality ofredistribution line insulating layers includes forming the plurality ofredistribution line insulating layers such that a thickness of theredistribution line insulating layer farthest from the semiconductorchip is less than thicknesses of a remainder of the plurality ofredistribution line insulating layers.
 20. The method of claim 11,wherein the forming of the redistribution line structure includesforming the redistribution line structure such that at least one of theplurality of redistribution line patterns protrudes, in a horizontaldirection, farther outside of a footprint of the semiconductor chip.